Datasheet

ManualsBrandsVISHAY ManualsFETsIRF840ASPBF, MOSFET

Document Number: 91066

www.vishay.com

S11-1050-Rev. D, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and

Avalanche Voltage and Current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

•Half Bridge

• Full Bridge

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 16 mH, R

= 25 , I

= 8.0 A (see fig. 12).

c. I

 8.0 A, dI/dt  100 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

e. Uses IRF840A, SiH840A data and test conditions.

PRODUCT SUMMARY

(V) 500

DS(on)

()V

= 10 V 0.85

(Max.) (nC) 38

(nC) 9.0

(nC) 18

Configuration Single

N-Channel MOSFET

PAK (TO-263)

PAK (TO-262)

ORDERING INFORMATION

Package D

PAK (TO-263) D

PAK (TO-263) I

PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF840AS-GE3 SiHF840ASTRL-GE3

SiHF840ASTRR-GE3

SiHF840AL-GE3

Lead (Pb)-free

IRF840ASPbF IRF840ASTRLPbF

IRF840ASTRRPbF

IRF840ALPbF

SiHF840AS-E3 SiHF840ASTL-E3

SiHF840ASTR-E3

SiHF840AL-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

8.0

= 100 °C 5.1

Pulsed Drain Current

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

510 mJ

Repetitive Avalanche Current

8.0 A

Repetitive Avalanche Energy

13 mJ

Maximum Power Dissipation

= 25 °C

125

= 25 °C 3.1

Peak Diode Recovery dV/dt

c, e

dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Temperature for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC 500 RDS(on) () VGS = 10 V 0.85 Qg (Max.) (nC) 38 Qgs (nC) 9.
PAGE 2
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 10 1 4.5 V 20 µs Pulse Width TJ = 25 °C 0.1 0.1 1 10 TJ = 150 °C TJ = 25 °C 1 20 µs Pulse Width VDS = 50 V 0.1 102 10 VDS, Drain-to-Source Voltage (V) 91066_01 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 102 4.0 4.5 V 1 20 µs Pulse Width TJ = 150 °C 0.1 0.
PAGE 4
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 104 Ciss 103 Coss 102 10 Crss 102 ISD, Reverse Drain Current (A) C, Capacitance (pF) 105 10 TJ = 150 °C TJ = 25 °C 1 1 102 10 103 VDS, Drain-to-Source Voltage (V) 91066_05 0.2 20 0.5 0.
PAGE 5
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix RD VDS 8.0 VGS D.U.T. Rg + - VDD ID, Drain Current (A) 6.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91066_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 PDM 0.20 0.1 0.10 t1 0.05 t2 0.02 0.
PAGE 6
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL EAS, Single Pulse Avalanche Energy (mJ) Vishay Siliconix 1200 ID 3.6 A 5.1 A Bottom 8.0 A Top 1000 QG 10 V 800 QGS 600 QGD VG 400 Charge 200 0 25 50 75 125 100 150 Fig. 13a - Basic Gate Charge Waveform Starting TJ, Junction Temperature (°C) 91066_12c Current regulator Same type as D.U.T. Fig. 12c - Maximum Avalanche Energy vs. Drain Current 50 kΩ 12 V 0.2 µF 0.3 µF + D.U.T.
PAGE 7
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
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