Datasheet

www.vishay.com Document Number: 91065
6 S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Basic Gate Charge Waveform
Fig. 13a - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13b - Gate Charge Test Circuit
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
10 V
Var y t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
91065_12c
1000
0
200
400
600
800
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Avalanche Energy (mJ)
1200
Bottom
To p
I
D
3.6 A
5.1 A
8.0 A
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
91065_12d
580
520
540
560
0.0 5.0
4.0
3.02.0
1.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
600
8.0
7.0
6.0
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-