Datasheet

Document Number: 91063 www.vishay.com
S-81290-Rev. A, 16-Jun-08 3
IRF830, SiHF830
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91063_01
10
1
10
0
10
-1
10
0
10
1
V
DS
, Drain-to-Source Voltage (V)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
I
D
, Drain Current (A)
4.5 V
91063_02
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
4.5 V
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
20
µs Pulse Width
V
DS
= 50 V
91063_03
10
1
10
0
10
-1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
56 7 8 910
4
25 °C
150 °C
I
D
= 3.1 A
V
GS
= 10 V
91063_04
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)