Datasheet

www.vishay.com Document Number: 91062
6 S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
500
0
100
200
300
400
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Avalanche Energy (mJ)
Bottom
To p
I
D
2.2 A
3.2 A
5.0 A
91062_12c
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
785
770
775
780
0.0
5.04.03.02.01.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
790
91062_12d
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-