Datasheet

Document Number: 91062 www.vishay.com
S11-1049-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91062_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
J
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10
10
2
10
10
-2
1
0.1
0.1 1 10
2
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
J
= 150 °C
91062_02
4.5 V
10
2
10
1
0.1
10110
2
20 µs Pulse Width
V
DS
= 50 V
I
D
, Drain-to-Source Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5.0 6.0 7.0 8.04.0
91062_03
T
J
= 25 °C
T
J
= 150 °C
10
2
10
1
0.1
I
D
= 5.0 A
V
GS
= 10 V
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91062_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160