Datasheet

ManualsBrandsVISHAY ManualsFETsIRF830ASPBF, MOSFET

Document Number: 91062

www.vishay.com

S11-1049-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective C

oss

specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 18 mH, R

= 25 , I

= 5.0 A (see fig. 12).

c. I

 5.0 A, dI/dt  370 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

e. Uses SiHF830A data and test conditions.

PRODUCT SUMMARY

(V) 500

DS(on)

(Max.) ()V

= 10 V 1.40

(Max.) (nC) 24

(nC) 6.3

(nC) 11

Configuration Single

N-Channel MOSFET

PAK

(TO-263)

PAK

(

TO-262)

ORDERING INFORMATION

Package D

PAK (TO-263) D

PAK (TO-263) I

PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF830AS-GE3 SiHF830ASTRL-GE3

SiHF830AL-GE3

Lead (Pb)-free

IRF830ASPbF IRF830ASTRLPbF

IRF830ALPbF

SiHF830AS-E3 SiHF830ASTL-E3

SiHF830AL-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

5.0

= 100 °C 3.2

Pulsed Drain Current

a, e

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

b, e

230 mJ

Avalanche Current

5.0 A

Repetiitive Avalanche Energy

7.4 mJ

Maximum Power Dissipation

= 25 °C

3.1

= 25 °C 74

Peak Diode Recovery dV/dt

c, e

dV/dt 5.3 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Compliant to RoHS Directive 2002/95/EC 500 RDS(on) (Max.) () VGS = 10 V 1.40 Qg (Max.) (nC) 24 Qgs (nC) 6.
PAGE 2
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10 1 4.5 V 0.1 20 µs Pulse Width TJ = 25 °C 10-2 0.1 VDS, Drain-to-Source Voltage (V) 91062_01 10 TJ = 150 °C TJ = 25 °C 1 20 µs Pulse Width VDS = 50 V 0.1 102 10 1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 102 4.0 ID, Drain-to-Source Current (A) 102 VGS 15 V 10 V 8.0 V 7.0 V 10 6.0 V 5.
PAGE 4
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 103 Ciss 102 Coss 10 Crss 102 ISD, Reverse Drain Current (A) C, Capacitance (pF) 104 1 102 10 1 TJ = 25 °C 16 VDS = 250 V 8 For test circuit see figure 13 0 8 12 16 20 100 µs QG, Total Gate Charge (nC) 1 ms 1 0.1 91062_08 10 ms TC = 25 °C TJ = 150 °C Single Pulse 10 24 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.
PAGE 5
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix RD VDS VGS 5.0 4.0 ID, Drain Current (A) D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 1.0 90 % 0.0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (°C) 91062_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.05 t1 t2 0.02 0.
PAGE 6
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL 500 ID Top 2.2 A 3.2 A Bottom 5.0 A 400 300 200 100 0 790 VDSav, Avalanche Voltage (V) EAS, Single Pulse Avalanche Energy (mJ) Vishay Siliconix 785 780 775 770 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) 91062_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current 1.0 0.0 2.0 3.0 4.0 5.0 IAV, Avalanche Current (A) 91062_12d Fig. 12d - Basic Gate Charge Waveform Current regulator Same type as D.U.T.
PAGE 7
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
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