Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsMOSFET N, 500 V 5 A 74 W TO-220

Document Number: 91061 www.vishay.com

S11-0507-Rev. C, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF830A, SiHF830A

Vishay Siliconix

FEATURES

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

•Half Bridge

• Full Bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 18 mH, R

= 25 Ω, I

= 5.0 A (see fig. 12).

c. I

≤ 5.0 A, dI/dt ≤ 370 A/μs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 500

DS(on)

(Ω)V

= 10 V 1.4

(Max.) (nC) 24

(nC) 6.3

(nC) 11

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF830APbF

SiHF830A-E3

SnPb

IRF830A

SiHF830A

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

5.0

= 100 °C 3.2

Pulsed Drain Current

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

230 mJ

Repetitive Avalanche Current

5.0 A

Repetitive Avalanche Energy

7.4 mJ

Maximum Power Dissipation T

= 25 °C P

74 W

Peak Diode Recovery dV/dt

dV/dt 5.3 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC 500 RDS(on) (Ω) VGS = 10 V 1.4 Qg (Max.) (nC) 24 Qgs (nC) 6.
PAGE 2
IRF830A, SiHF830A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF830A, SiHF830A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91061 S11-0507-Rev. C, 21-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 4
IRF830A, SiHF830A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91061 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 5
IRF830A, SiHF830A Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.05 0.02 0.01 t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 91061_11 10-4 10-3 10-2 0.
PAGE 6
IRF830A, SiHF830A Vishay Siliconix 15 V QG 10 V Driver L VDS QGS D.U.T. RG 20 V VG + A - VDD IAS QGD 0.01 Ω tp Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 12d - Basic Gate Charge Waveform VDS tp VDSav, Avalanche Voltage (V) 790 IAS EAS, Single Pulse Avalanche Energy (mJ) Fig. 12b - Unclamped Inductive Waveforms 785 780 775 500 ID 2.2 A 3.2 A Bottom 5.0 A 770 Top 400 300 0.0 1.0 2.0 3.0 4.0 5.0 IAV, Avalanche Current (A) 91061_12d Fig.
PAGE 7
IRF830A, SiHF830A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 *M DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.
PAGE 9
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