Datasheet

www.vishay.com Document Number: 91052
6 S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 12d - Typlical Drain-to-Source Voltage
vs. Avalanche Current
Fig. 13b - Gate Charge Test Circuit
1400
0
400
600
800
1000
1200
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Avalanche Energy (mJ)
Bottom
To p
I
D
4.5 A
6.3 A
10 A
91052_12c
200
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
560
480
520
540
1.0 6.0
5.0
4.03.0
2.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
580
9.0
8.0
7.0
91052_12d
500
10.0
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-