Datasheet

Document Number: 91052
www.vishay.com
S11-1048-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C
oss
specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 12.6 mH, R
g
= 25 , I
AS
= 10 A (see fig. 12).
c. I
SD
 10 A, dI/dt  330 A/μs, V
DD
 V
DS
, T
J
 150 °C.
d. 1.6 mm from case.
e. Uses IRF740A, SiHF740A data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 400
R
DS(on)
()V
GS
= 10 V 0.55
Q
g
(Max.) (nC) 36
Q
gs
(nC) 9.9
Q
gd
(nC) 16
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF740AS-GE3 SiHF740ASTRL-GE3
a
SiHF740ASTRR-GE3
a
SiHF740AL-GE3
Lead (Pb)-free
IRF740ASPbF IRF740ASTRLPbF
a
IRF740ASTRRPbF
a
IRF740ALPbF
SiHF740AS-E3 SiHF740ASTL-E3
a
SiHF740ASTR-E3
a
SiHF740AL-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
400
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current
e
V
GS
at 10 V
T
C
= 25 °C
I
D
10
AT
C
= 100 °C 6.3
Pulsed Drain Current
a, e
I
DM
40
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
630 mJ
Avalanche Current
a
I
AR
10 A
Repetiitive Avalanche Energy
a
E
AR
12.5 mJ
Maximum Power Dissipation
T
A
= 25 °C
P
D
3.1
W
T
C
= 25 °C 125
Peak Diode Recovery dV/dt
c, e
dV/dt 5.9 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply