Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsMOSFET N, 400 V 5.5 A 74 W TO-220

Document Number: 91045 www.vishay.com

S11-0508-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF730A, SiHF730A

Vishay Siliconix

FEATURES

• Low Gate Charge Q

results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective Coss Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset (Both US Line Input

Only)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 19 mH, R

= 25 Ω, I

= 5.5 A (see fig. 12).

c. I

≤ 5.5 A, dI/dt ≤ 90 A/μs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 400

DS(on)

(Ω)V

= 10 V 1.0

(Max.) (nC) 22

(nC) 5.8

(nC) 9.3

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF730APbF

SiHF730A-E3

SnPb

IRF730A

SiHF730A

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

400

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

5.5

= 100 °C 3.5

Pulsed Drain Current

Linear Derating Factor 0.6 W/°C

Single Pulse Avalanche Energy

290 mJ

Repetitive Avalanche Current

5.5 A

Repetitive Avalanche Energy

7.4 mJ

Maximum Power Dissipation T

= 25 °C P

74 W

Peak Diode Recovery dV/dt

dV/dt 4.6 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.
PAGE 2
IRF730A, SiHF730A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Case (Drain) RthJC - 1.70 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Ambient RthJA - 62 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS TYP. MAX. UNIT Static VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.5 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.
PAGE 3
IRF730A, SiHF730A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 ID, Drain-to-Source Current (A) 0.1 4.5 V 20 µs Pulse Width TC = 25 °C 10-2 0.1 1 TJ = 150 °C 10 TJ = 25 °C 1 20 µs Pulse Width VDS = 50 V 0.1 102 10 VDS, Drain-to-Source Voltage (V) 91045_01 ID, Drain-to-Source Current (A) 102 VGS 15 V 10 V 8.0 V 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 1 Top 4.0 ID, Drain-to-Source Current (A) VGS 15 V 10 V 8.0 V 10 7.0 V 6.0 V 5.5 V 5.0 V 1 Bottom 4.5 V 4.
PAGE 4
IRF730A, SiHF730A Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 104 103 Ciss 102 Coss 10 Crss 102 ISD, Reverse Drain Current (A) 105 VGS = 0 V 0.1 1 102 10 103 VDS, Drain-to-Source Voltage (V) 91045_05 0.4 102 ID, Drain Current (A) VDS = 200 V 12 8 4 For test circuit see figure 13 0 0 91045_06 5 10 15 20 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.
PAGE 5
IRF730A, SiHF730A Vishay Siliconix RD VDS VGS 6.0 D.U.T. RG + - VDD ID, Drain Current (A) 5.0 10 V 4.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 1.0 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91045_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 0.1 PDM 0.1 0.05 0.02 0.01 t1 t2 Notes: 1.
PAGE 6
IRF730A, SiHF730A Vishay Siliconix 610 Driver L VDS D.U.T. RG + A - VDD IAS 20 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit VDSav, Avalanche Voltage (V) 15 V 600 590 580 570 560 550 540 0.0 3.0 4.0 5.0 6.0 IAV, Avalanche Current (A) 91045_12d VDS 2.0 1.0 tp Fig. 12d - Typical Drain Source Voltage vs. Avalanche Current IAS QG 10 V QGS QGD Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Avalanche Energy (mJ) VG 700 ID 2.5 A 3.5 A Bottom 5.
PAGE 7
IRF730A, SiHF730A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 *M DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.
PAGE 9
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