Datasheet

ManualsBrandsVISHAY ManualsFETsIRF640SPBF, MOSFET

Document Number: 91037

www.vishay.com

S11-1047-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF640S, IRF640L, SiHF640S, SiHF640L

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Low-Profile Through-Hole

• Available in Tape and Reel

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combinations of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the last lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRF640L/SiHF640L) is available for

low-profile applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 2.7 mH, R

= 25 , I

= 18 A (see fig. 12).

c. I

 18 A, dI/dt  150 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

e. Uses IRF640/SiHF640 data and test conditions.

PRODUCT SUMMARY

(V) 200

DS(on)

()V

= 10 V 0.18

(Max.) (nC) 70

(nC) 13

(nC) 39

Configuration Single

N-Channel MOSFET

PAK

(TO-263)

PAK

(TO-262)

ORDERING INFORMATION

Package D

PAK (TO-263) D

PAK (TO-263) I

PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF640S-GE3 SiHF640STRL-GE3

SiHF640STRR-GE3

SiHF640L-GE3

Lead (Pb)-free

IRF640SPbF IRF640STRLPbF

IRF640STRRPbF

IRF640LPbF

SiHF640S-E3 SiHF6340STL-E3

SiHF640STR-E3

SiHF640L-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 11

Pulsed Drain Current

a, e

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

b, e

580 mJ

Avalanche Current

18 A

Repetiitive Avalanche Energy

13 mJ

Maximum Power Dissipation

= 25 °C

3.1

= 25 °C 130

Peak Diode Recovery dV/dt

c, e

dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.
PAGE 2
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 ID, Drain Current (A) ID, Drain Current (A) Top 100 25 °C 100 4.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 4 4.5 V 100 20 µs Pulse Width TC = 150 °C 10-1 91037_02 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TJ = 175 °C Document Number: 91037 S11-1047-Rev.
PAGE 4
IRF640S, IRF640L, SiHF640S, SiHF640L 3000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss 500 Crss ISD, Reverse Drain Current (A) Vishay Siliconix 150 °C 25 °C 101 100 VGS = 0 V 0 100 101 0.
PAGE 5
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix RD VDS 20 ID, Drain Current (A) VGS D.U.T. Rg 16 12 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 8 Fig. 10a - Switching Time Test Circuit 4 VDS 90 % 0 25 50 75 100 125 150 TC, Case Temperature (°C) 91037_09 10 % VGS Fig. 9 - Maximum Drain Current vs. Case Temperature td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0.1 0 − 0.5 0.2 0.1 0.05 0.02 0.
PAGE 6
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix VDS 15 V tp Driver L VDS Rg D.U.T. + A - VDD IAS 20 V tp IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1400 ID 8.0 A 11.0 A Bottom 18.0 A Top 1200 1000 800 600 400 200 0 VDD = 50 V 25 91037_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 7
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
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