Datasheet

www.vishay.com Document Number: 91024
4 S11-1046-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF610S, SiHF610S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
91024_05
300
250
200
150
0
100
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
C
rss
C
oss
50
91024_06
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
02 864
I
D
= 3.3 A
For test circuit
see figure 13
10
V
DS
= 40 V
V
DS
= 100 V
V
DS
= 160 V
91024_07
10
1
10
0
10
-1
25 °C
150 °C
0.4 0.8 1.61.2 2.0
V
GS
= 0 V
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
-2
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
25
10
25
10
2
25
10
3
91024_08