Datasheet
www.vishay.com Document Number: 91019
2 S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.7
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 100 - -
V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.12 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 -
4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - -
± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V - -
25
µA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C - -
250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 8.4 A
b
--
0.16 Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 8.4 A
b
5.1 - -
S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 670 -
pFOutput Capacitance C
oss
- 250 -
Reverse Transfer Capacitance C
rss
-60-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 14 A, V
DS
= 80 V,
see fig. 6 and 13
b
--26
nC Gate-Source Charge Q
gs
--5.5
Gate-Drain Charge Q
gd
--11
Turn-On Delay Time t
d(on)
V
DD
= 50 V, I
D
= 14 A
R
G
= 12 Ω, R
D
= 3.6 Ω, see fig. 10
b
-10-
ns
Rise Time t
r
-34-
Turn-Off Delay Time t
d(off)
-23-
Fall Time t
f
-24-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--14
A
Pulsed Diode Forward Current
a
I
SM
--56
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
--
2.5 V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/µs
b
-
150 280 ns
Body Diode Reverse Recovery Charge Q
rr
-
0.85 1.7 µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G