Datasheet

www.vishay.com Document Number: 91017
6 S-81240-Rev. A, 16-Jun-08
IRF520, SiHF520
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
600
0
100
200
300
400
500
25 1501251007550
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
3.8 A
6.5 A
9.2 A
V
DD
= 25 V
91017_12c
175
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-