Datasheet

www.vishay.com Document Number: 91017
4 S-81240-Rev. A, 16-Jun-08
IRF520, SiHF520
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
750
600
450
300
0
150
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91017_05
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
4
20
1612
8
I
D
= 9.2 A
For test circuit
see figure 13
91017_06
V
DS
= 20 V
V
DS
= 50 V
V
DS
= 80 V
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
25 °C
175 °C
V
GS
= 0 V
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0.5 0.90.80.70.6 1.0 1.21.1
10
-1
10
2
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
0.1
10
3
0.1
2
5
1
2
5
10
2
5
2
5
25
1
25
10
25
10
2
25
10
3
91017_08