Datasheet

www.vishay.com Document Number: 91015
6 S-81377-Rev. A, 30-Jun-08
IRF510, SiHF510
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
300
0
50
100
150
200
250
25 1501251007550
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
2.3 A
4.0 A
5.6 A
V
DD
= 25 V
91015_12c
175
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-