Datasheet

IMBD4148
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Feb-18
3
Document Number: 85731
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Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
200
18663
T
amb
- Ambient Temperature ( °C)
500
400
300
200
100
20 40 60 80 100 120 140 1601800
0
P - Admissible Power Dissipation ( mW )
tot
18664
24680
1.1
1.0
0.9
0.8
0.7
10
C
D
(V
R
)/C
D
(0 V) - Relative Capacitance (pF)
V
R
- Reverse Voltage (V)
=25
°
CT
j
f=1MHz
18665
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160 180 200
I - Leakage Current ( nA )
R
T
j
- Junction Temperature ( ° C)
=20VV
R
10 101
-1
100
10
1
0.1
ν
/T T = 1/f=t
pp
I
FRM
t
p
T
t
I
ν
=0
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
18666
I - Admissible Repetitive
FRM
Peak Forward Current ( A )
t
p
- Pulse Length ( s )