Datasheet

IMBD4148
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Feb-18
2
Document Number: 85731
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 10 mA V
F
1.0 V
Leakage current
V
R
= 70 V I
R
2500 nA
V
R
= 70 V, Tj = 150 °C I
R
50 μA
V
R
= 25 V, Tj = 150 °C I
R
30 μA
Diode capacitance V
F
= V
R
= 0 C
D
4pF
Reverse recovery time
(see figures)
I
F
= 10 mA to i
R
= 1 mA,
V
R
= 6 V, R
L
= 100 
t
rr
4ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
18661
1000
100
10
1
0.1
0.01
I - Forward Current ( mA )
F
0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20.2
V
F
- Forward Voltage ( V )
= 100
°
CT
j
25
°
C
18662
1
10
100
1000
10000
r - Dynamic Forward Resistance
f
(Ω)
1100.10.01 100
I
F
- Forward Current (mA)
=25
°
CT
j
f=1kHz