Datasheet

IMBD4148
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Feb-18
1
Document Number: 85731
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diodes
Fast switching diode in case SOT-23, especially
suited for automatic insertion.
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Device on fiberglass substrate, see layout on next page
12
3
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
IMBD4148
IMBD4148-E3-08 or IMBD4148-E3-18
Single A2 Tape and reel
IMBD4148-HE3-08 or IMBD4148-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75 V
Peak reverse voltage V
RM
100 V
Rectified current (average) half wave
rectification with resist.
(1)
f 50 Hz I
F(AV)
150 mA
Surge forward current t < 1 s, T
j
= 25 °C I
FSM
500 mA
Power dissipation
(1)
up to T
amb
= 25 °C P
tot
350 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
450 °C/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C

Summary of content (5 pages)