Datasheet

VISHAY
ILD620/ 620GB / ILQ620/ 620GB
Document Number 83653
Rev. 1.3, 26-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= ± 10 mA V
F
1.0 1.15 1.3 V
Forward current V
R
= ± 0.7 V I
F
2.5 20 µA
Capacitance V
F
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance, junction to
lead
R
THJL
750 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector-emitter leakage
current
V
CE
= 24 V I
CEO
10 100 nA
T
A
= 85 °C, V
CE
= 24 V I
CEO
2.0 50 µA
Thermal resistance, junction to
lead
R
THJL
500 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Off-state collector current V
F
= ± 0.7 V, V
CE
= 24 V I
CE(OFF)
1.0 10 µA
Collector-emitter saturation
voltage
I
F
= ± 8.0 mA, I
CE
= 2.4 mA ILD620 V
CEsat
0.4 V
ILQ620 V
CEsat
0.4 V
I
F
= ± 1.0 mA, I
CE
= 0.2 mA ILD620GB V
CEsat
0.4 V
ILQ620GB V
CEsat
0.4 V
Parameter Test condition Part Symbol Min Typ. Max Unit
Channel/Channel CTR match I
F
= ± 5.0 mA, V
CE
= 5.0 V CTRX/CTRY 1 to 1 3 to 1
CTR symmetry I
CE
(I
F
= - 5.0 mA)/
I
CE
(I
F
= + 5.0 mA)
I
CE(RATIO)
0.5 2.0
Current Transfer Ratio
(collector-emitter saturated)
I
F
= ± 1.0 mA, V
CE
= 0.4 V ILD620 CTR
CEsat
60 %
ILQ620 CTR
CEsat
60 %
Current Transfer Ratio
(collector-emitter)
I
F
= ± 5.0 mA, V
CE
= 5.0 V ILD620 CTR
CE
50 80 600 %
ILQ620 CTR
CE
50 80 600 %
Current Transfer Ratio
(collector-emitter saturated)
I
F
= ± 1.0 mA, V
CE
= 0.4 V ILD620GB CTR
CEsat
30 %
ILQ620GB CTR
CEsat
30 %
Current Transfer Ratio
(collector-emitter)
I
F
= ± 5.0 mA, V
CE
= 5.0 V ILD620GB CTR
CE
100 200 600 %
ILQ620GB CTR
CE
100 200 600 %