Datasheet

5–2
ILD/Q615
Characteristics, T
A
=25 ° C
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
F
1 1.15 1.3 V I
F
=10 mA
Breakdown Voltage V
BR
630 VI
R
=10 µ A
Reverse Current I
F
0.01 10 µ AV
R
=6 V
Capacitance C
O
25 pF V
R
=0 V, f=1 MHz
Thermal Resistance, Junction to Lead R
THJL
750 ° C/W
Detector
Capacitance C
CE
6.8 pF V
CE
=5 V, f=1 MHz
Collector-Emitter Leakage Current, -1, -2 I
CEO
250nAV
CE
=10 V
Collector-Emitter Leakage Current, -3, -4 I
CEO
5 100 nA V
CE
=10 V
Collector-Emitter Breakdown Voltage BV
CEO
70 V I
CE
=0.5 mA
Emitter-Collector Breakdown Voltage BV
ECO
7VI
E
=0.1 mA
Thermal Resistance, Junction to Lead R
THJL
500 ° C/W
Package Transfer Characteristics
Channel/Channel CTR Match CTRX/CTRY 1 to 1 2 to 1 I
F
=10 mA, V
CE
=5 V
ILD/Q615-1
Saturated Current Transfer Ratio CTR
CEsat
25 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio CTR
CE
40 60 80 % I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio CTR
CE
13 30 % I
F
=1 mA, V
CE
=5 V
ILD/Q615-2
Saturated Current Transfer Ratio CTR
CEsat
40 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio CTR
CE
63 80 125 % I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio CTR
CE
22 45 % I
F
=1 mA, V
CE
=5 V
ILD/Q615-3
Saturated Current Transfer Ratio CTR
CEsat
60 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio CTR
CE
100 150 200 % I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio CTR
CE
34 70 % I
F
=1 mA, V
CE
=5 V
ILD/Q615-4
Saturated Current Transfer Ratio CTR
CEsat
100 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio CTR
CE
160 200 320 % I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio CTR
CE
56 90 % I
F
=1 mA, V
CE
=5 V
Isolation and Insulation
Common Mode Rejection, Output High CMH 5000 V/ µ sV
CM
=50 V
P-P
, R
L
=1 k Ω , I
F
=0 mA
Common Mode Rejection, Output Low CML 5000 V/ µ sV
CM
=50 V
P-P
, R
L
=1 k Ω , I
F
=10 mA
Common Mode Coupling Capacitance C
CM
0.01 pF
Package Capacitance CI-O 0.8 pF V
IO
=0 V, f=1 MHz
Insulation Resistance R
S
10
14
Ω V
IO
=500 V, T
A
=25°C
Channel to Channel Isolation 500 VAC