Datasheet

5–2
ILD/Q1/2/5
Characteristics
Package Transfer Characteristics (Each Channel)
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
F
1.25 1.65 V I
F
=60 mA
Reverse Current I
R
0.01 10 µ AV
R
=6 V
Capacitance C
0
25 pF V
R
=0 V, f=1 MHz
Thermal Resistance, Junction to Lead R
THJL
750 ° C/W
Detector
Capacitance C
CE
6.8 pF V
CE
=5 V, f=1 MHz
Leakage Current, Collector-Emitter I
CEO
550nAV
CE
=10 V
Saturation Voltage, Collector-Emitter V
CESAT
0.25 0.4 I
CE
=1 mA, I
B
=20 µ A
DC Forward Current Gain HFE 200 650 1800 V
CE
= 10 V, I
B
=20 µ A
Saturated DC Forward Current Gain HFE
SAT
120 400 600 V
CE
= 0.4 V, I
B
=20 µ A
Thermal Resistance, Junction to Lead R
THJL
500 ° C/W
Symbol Min. Typ. Max. Unit Condition
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
75 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
20 90 300 % I
F
=10 mA, V
CE
=10 V
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
170 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
100 200 500 % I
F
=10 mA, V
CE
=10 V
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
100 % I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
50 130 400 % I
F
=10 mA, V
CE
=10 V
Isolation and Insulation
Common Mode Rejection, Output High C
MH
5000 V/ µ sV
CM
=50 V
P-P
, R
L
=1 k Ω , I
F
=0 mA
Common Mode Rejection, Output Low C
ML
5000 V/ µ sV
CM
=50 V
P-P
, R
L
=1 k Ω , I
F
=10 mA
Common Mode Coupling Capacitance C
CM
0.01 pF
Package Capacitance C
IO
0.8 pF V
IO
=0 V, f=1 MHz