Datasheet

VISHAY
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Document Number 83646
Rev. 1.3, 10-Jun-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance, junction to
lead
T
thJL
750 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector-emitter leakage
current
V
VCE
= 10 V I
CEO
5.0 50 nA
Saturation voltage, collector-
emitter
I
CE
= 1.0 mA, I
B
= 20 µAV
CESAT
0.25 0.4 V
DC forward current gain V
CE
= 10 V, I
B
= 20 µA HFE 200 650 1800
DC forward current gain
saturated
V
CE
= 0.4 V, I
B
= 20 µAHFE
sat
120 400 600
Thermal resistance, junction to
lead
R
thjl
500 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Capacitance (input-output) V
IO
= 0 V, f = 1.0 MHz C
IO
0.8 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Current Transfer Ratio
(collector-emitter saturated)
I
F
= 10 mA, V
CE
= 0.4 V ILD1
ILQ1
CTR
CEsat
75 %
ILD2
ILQ2
CTR
CEsat
170 %
ILD5
ILQ5
CTR
CEsat
100 %
Current Transfer Ratio
(collector-emitter)
I
F
= 10 mA, V
CE
= 10 V ILD1
ILQ1
CTR
CE
20 80 300 %
ILD2
ILQ2
CTR
CE
100 200 500 %
ILD5
ILQ5
CTR
CE
50 130 400 %