Datasheet

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2
Document Number 83646
Rev. 1.3, 10-Jun-04
VISHAY
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
2.5 A
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.3 mW/°C
Parameter Test condition Part Symbol Value Unit
Collector-emitter reverse voltage ILD1 V
CER
50 V
ILQ1 V
CER
50 V
ILD2 V
CER
70 V
ILQ2 V
CER
70 V
ILD5 V
CER
70 V
ILQ5 V
CER
70 V
Collector current I
C
50 mA
t < 1.0 ms I
C
400 mA
Power dissipation P
diss
200 mW
Derate linearly from 25 °C 2.6 mW/°C
Parameter Test condition Symbol Value Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
V
ISO
5300 V
RMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation resistance V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Package power dissipation P
tot
250 mW
Derate linearly from 25 °C 3.3 mW/°C
Storage temperature T
stg
- 40 to + 150 °C
Operating temperature T
amb
- 40 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature 2.0 mm from case bottom T
sld
260 °C