Datasheet

Document Number: 83630 For technical questions, contact: [e-mail]
www.vishay.com
Rev. 1.6, 20-Oct-10 3
IL4216, IL4217, IL4218
Optocoupler, Phototriac Output,
High dV/dt, Low Input Current
Vishay Semiconductors
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
POWER FACTOR CONSIDERATIONS
A snubber is not needed to eliminate false operation of the
TRIAC driver because of the IL4216, IL4217, IL4218 high
static and commutating dV/dt with loads between 1 and 0.8
power factors. When inductive loads with power factors less
than 0.8 are being driven, include a RC snubber or a single
capacitor directly across the device to damp the peak
commutating dV/dt spike. Normally a commutating dV/dt
causes a turning-off device to stay on due to the stored
energy remaining in the turning-off device.
Fig. 1 - Shunt Capacitance vs. Load Current vs. Power Factor
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 20 mA V
F
1.3 1.5 V
Breakdown voltage I
R
= 10 μA V
BR
630 V
Reverse current V
R
= 6 V I
R
0.1 10 μA
Input capacitance V
F
= 0 V, f = 1 MHz C
IN
40 pF
Thermal resistance, junction to lead R
thjI
750 °C/W
OUTPUT
Repetitive peak off-state voltage I
DRM
= 100 μA
IL4216 V
DRM
600 650 V
IL4217 V
DRM
700 750 V
IL4218 V
DRM
800 850 V
Off-state voltage I
D(RMS)
= 70 μA
IL4216 V
D(RMS)
424 460 V
IL4217 V
D(RMS)
484 536 V
IL4218 V
D(RMS)
565 613 V
Off-state current V
D
= 600 V, T
amb
= 100 °C I
D(RMS)
10 100 μA
Reverse current V
R
= 600 V, T
amb
= 25 °C I
RMS
10 100 μA
On-state voltage I
T
= 300 mA V
TM
1.7 3 V
On-state current PF = 1, V
T(RMS)
= 1.7 V I
TM
300 mA
Surge (non-repetitive, on-state current) f = 50 Hz I
TSM
3A
Holding current V
T
= 3 V I
H
65 200 μA
Latching current V
T
= 2.2 V I
L
500 μA
LED trigger current V
AK
= 5 V I
FT
0.7 mA
Critical rate of rise of off-state voltage
V
D
= 0.67 V
DRM
, T
amb
= 25 °C dV/dt
cr
10 000 V/μs
V
D
= 0.67 V
DRM
, T
amb
= 80 °C dV/dt
cr
5000 V/μs
Critical rate of rise of voltage at current
commutation
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 25 °C
dV/dt
crq
8V/μs
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 85 °C
dV/dt
crq
7V/μs
Critical rate of rise of on-state current
commutation
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 25 °C
dI/dt
crq
12 A/ms
Thermal resistance, junction to lead R
thjI
150 °C/W
COUPLER
Capacitance (input to output) f = 1 MHz, V
IO
= 0 V C
IO
0.8 pF
Critical rate of rise of coupled
input to output voltage
I
T
= 0, V
RM
= V
DM
= 300 VAC dV
(IO)
/dt 5000 1 mA
iil4116_07
400350300
250
200150100
500
I - Load Current (mA)
C
S
- Shunt Capacitance (µF)
L
0.001
0.01
0.1
1
C (µF) = 0.0032 (µF) x 10 ^ (0.0066 I
L
(mA))
S
P
F
= 0.3
I
F
= 2.0 mA