Datasheet
VISHAY
IL420/ IL4208
Document Number 83629
Rev. 1.4, 26-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 10 mA V
F
1.16 1.35 V
Reverse current V
R
= 6.0 V I
R
0.1 10 µA
Input capacitance V
F
= 0 V, f = 1.0 MHz C
IN
40 pF
Thermal resistance, junction to
ambient
R
thja
750 °C/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Off-state voltage I
D(RMS)
= 70 µA IL420 V
D(RMS)
424 460 V
I
D(RMS)
= 70 µA IL4208 V
D(RMS)
565 V
Repetitive peak off-state voltage I
DRM
= 100 µs IL420 V
DRM
600 V
IL4208 V
DRM
800 V
Off-state current V
D
= V
DRM,
, T
A
= 100 °C I
BD
10 100 µA
On-state voltage I
T
= 300 mA V
TM
1.7 30 V
On-current PF = 1.0, V
T(RMS)
= 1.7 V I
TM
300 mA
Surge (Non-repetitive) on-state
current
f = 50 Hz I
TSM
3.0 A
Holding current I
H
65 500 µA
Latching current V
T
= 2.2 V I
L
5.0 mA
LED trigger current V
AK
= 5.0 V I
FT
1.0 2.0
Trigger current temperature
gradient
∆I
FT
/∆T
j
7.0 14 µA/°C
Critical state of rise off-state
voltage
V
D
= 0.67 V
DRM
, T
J
= 25 °C dV/dt
cr
1000 V/µs
V
D
= 0.67 V
DRM
, T
J
= 80 °C dV/dt
cr
5000 V/µs
Critical rate of rise of voltage at
current commutation
V
D
= 0.67 V
DRM
,
dI/dt
crq
≤ 15 A/ms , T
J
= 25 °C
dV/dt
crq
10000 V/µs
V
D
= 0.67 V
DRM
,
dI/dt
crq
≤ 15 A/ms , T
J
= 80 °C
dV/dt
crq
5000 V/µs
Critical state of rise of on-state
current
dI/dt
cr
8.0 A/µs
Thermal resistance, junction to
ambient
R
thja
150 °C/W
Parameter Test condition Symbol Min Typ. Max Unit
Critical rate of rise of coupled
input/output voltage
I
T
= 0 A, V
RM
= V
DM
= V
D(RMS)
dV/dt 500 V/µs
Capacitance (input-output) f = 1.0 MHz, V
IO
= 0 V C
IO
0.8 pF
Isolation resistance V
IO
= 500, T
A
= 25 °C R
IO
10
12
Ω
V
IO
= 500, T
A
= 100 °C R
IO
10
11
Ω