Datasheet

VISHAY
IL410/ IL4108
Document Number 83627
Rev. 1.4, 26-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
≥ 175
Isolation resistance V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Soldering temperature max. ≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
T
sld
260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 10 mA V
F
1.16 1.35 V
Reverse current V
R
= 6.0 V I
R
0.1 10 µA
Input capacitance V
F
= 0 V, f = 1.0 MHz C
IN
25 pF
Thermal resistance, junction to
ambient
R
thja
750 °C/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Off-state voltage I
D(RMS)
= 70 µA IL410 V
D(RMS)
424 460 V
IL4108 V
D(RMS)
565 V
Repetitive peak off-state voltage I
DRM
= 100 µA IL410 V
DRM
600 V
IL4108 V
DRM
800 V
Off-state current V
D
= V
DRM
, T
amb
= 100 °C,
I
F
= 0 mA
I
D(RMS)1
10 100 µA
V
D
= V
DRM
, I
F
= Rated I
FT
I
D(RMS)2
200 µA
On-state voltage I
T
= 300 mA V
TM
1.7 3.0 V
On-state current PF = 1.0, V
T(RMS)
= 1.7 V I
TM
300 mA
Surge (non-repetitive), on-state
current
f = 50 Hz I
TSM
3.0 A
Trigger current 1 V
D
= 5.0 V I
FT1
2.0 mA
Trigger current 2 V
OP
= 220 V, f = 50 Hz,
T
J
= 100 °C, t
pF
> 10 ms
I
FT2
6.0 mA
Trigger current temp. gradient ∆I
FT1
/∆T
j
7.0 14 µA/°C
∆I
FT2
/∆T
j
7.0 14 µA/°C
Inhibit voltage temp. gradient ∆V
DINH
/∆T
j
-20 mV/°C
Off-state current in inhibit state I
F
= I
FT1
, V
DRM
I
DINH
50 200 µA
Holding current I
H
65 500 µA
Latching current V
T
= 2.2 V I
L
5.0 mA
Zero cross inhibit voltage I
F
= Rated I
FT
V
IH
15 25 V
Turn-on time V
RM
= V
DM
= V
D(RMS)
t
on
35 µs
Turn-off time PF = 1.0, I
T
= 300 mA t
off
50 µs
Parameter Test condition Symbol Value Unit