Datasheet

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2
Document Number 83627
Rev. 1.4, 26-Apr-04
VISHAY
IL410/ IL4108
Vishay Semiconductors
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Part Remarks
IL410 600 V V
DRM
, DIP-6
IL4108 800 V V
DRM
, DIP-6
IL410-X006 600 V V
DRM
, DIP-6 400 mil (option 6)
IL410-X007 600 V V
DRM
, SMD-6 (option 7)
IL410-X009 600 V V
DRM
, SMD-6 (option 9)
IL4108-X006 800 V V
DRM
, DIP-6 400 mil (option 6)
IL4108-X007 800 V V
DRM
, SMD-6 (option 7)
IL4108-X009 800 V V
DRM
, SMD-6 (option 9)
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
2.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
Parameter Test condition Part Symbol Value Unit
Peak off-state voltage IL410 V
DM
600 V
IL4108 V
DM
800 V
RMS on-state current I
TM
300 mA
Single cycle surge current 3.0 A
Total power dissipation P
diss
500 mW
Derate from 25 °C 6.6 mW/°C
Parameter Test condition Symbol Value Unit
Isolation test voltage (between
emitter and detector, climate per
DIN 500414, part 2, Nov. 74)
t = 1.0 min. V
ISO
5300 V
RMS
Pollution degree (DIN VDE
0109)
2
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm