Datasheet
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
Rev. 2.5, 02-May-17
5
Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT05 (T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 10 μA V
R
5--V
Reverse current at V
R
= 5 V I
R
--10μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
66.88 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-78.7V
at I
PP
= I
PPM
= 30 A - 12 16 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 30 A - 4.5 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 260 350 pF
at V
R
= 2.5 V; f = 1 MHz - 150 - pF
ELECTRICAL CHARACTERISTICS GSOT08 (T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--8V
Reverse voltage at I
R
= 5 μA V
R
8--V
Reverse current at V
R
= 8 V I
R
--5μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
91011V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 10.7 13 V
at I
PP
= I
PPM
= 18 A - 15.2 19.2 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 18 A - 3 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 160 250 pF
at V
R
= 4 V; f = 1 MHz - 80 - pF
ELECTRICAL CHARACTERISTICS GSOT12 (T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--12V
Reverse voltage at I
R
= 1 μA V
R
12 - - V
Reverse current at V
R
= 12 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
13.5 15 16.5 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 15.4 18.7 V
at I
PP
= I
PPM
= 12 A - 21.2 26 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 12 A - 2.2 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 115 150 pF
at V
R
= 6 V; f = 1 MHz - 50 - pF