Datasheet

GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
Rev. 2.9, 17-Apr-2019
8
Document Number: 85824
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (V
C
) is defined by the breakthrough
voltage (V
BR
) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
ELECTRICAL CHARACTERISTICS GSOT36C (T
amb
= 25 °C unless otherwise specified) 
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--2lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--36V
Reverse voltage at I
R
= 1 μA V
R
36 - - V
Reverse current at V
R
= 36 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
39 43 47 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-4960V
at I
PP
= I
PPM
= 3.5 A - 59 71 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 3.5 A - 1.3 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
-5265pF
at V
R
= 18 V; f = 1 MHz - 12 - pF
L1
20361
2 1
3
Ground
BiSy
ELECTRICAL CHARACTERISTICS GSOT03C (T
amb
= 25 °C unless otherwise specified) 
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--3.8V
Reverse voltage at I
R
= 100 μA V
R
3.8 - - V
Reverse current at V
R
= 3.8 V I
R
- - 100 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
4.5 5.3 6.2 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-78.4V
at I
PP
= I
PPM
= 30 A - 14 16.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 210 300 pF
at V
R
= 1.6 V; f = 1 MHz - 190 - pF