Datasheet

GSD2004W
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Feb-18
2
Document Number: 85729
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PACKAGE DIMENSIONS in millimeters (inches): SOD-123
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA V
(BR)
300 V
Leakage current
V
R
= 240 V I
R
100 nA
V
R
= 240 V, T
j
= 150 °C I
R
100 μA
Forward voltage
I
F
= 100 mA V
F
1V
I
F
= 20 mA V
F
0.83 0.87 V
Diode capacitance V
F
= V
R
= 0, f = 1 MHz C
D
5pF
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100 
t
rr
50 ns
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026) 0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432