Datasheet

GSD2004S
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Feb-18
2
Document Number: 85728
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Note
(1)
Device on fiberglass substrate
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA V
BR
300 V
Leakage current
V
R
= 240 V I
R
100 nA
V
R
= 240 V, T
j
= 150 °C I
R
100 μA
Forward voltage
I
F
= 20 mA V
F
0.83 0.87 V
I
F
= 100 mA V
F
1.00 V
Diode capacitance V
F
= V
R
= 0, f = 1 MHz C
D
5.0 pF
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3.0 mA,
R
L
= 100 
t
rr
50 ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)