Datasheet

ManualsBrandsVishay ManualsDiodesSwitching Diode 225mA 300V SOT-23

GSD2004S

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 13-Feb-18

Document Number: 85728

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, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual In-Series Small Signal High Voltage Switching Diode

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MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.8 mg

Packaging codes / options:

18/10K per 13” reel (8 mm tape), 10K/box

08/3K per 7” reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Fast switching dual in-series diode, especially

suited for applications requiring high voltage

capability

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

(1)

Device on fiberglass substrate

Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS

GSD2004S

GSD2004S-E3-08 or GSD2004S-E3-18

Dual serial DB6 Tape and reel

GSD2004S-HE3-08 or GSD2004S-HE3-18

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Continuous reverse voltage V

240 V

Peak repetitive reverse voltage V

RRM

300 V

Forward current (continuous) I

225 mA

Peak repetitive forward current I

FRM

625 mA

Non-repetitive peak forward current

= 1 μs I

FSM

4.0 A

= 1 s I

FSM

1.0 A

Power dissipation

(1)

tot

350 mW

THERMAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Typical thermal resistance junction to

ambient air

(1)

thJA

357 °C/W

Junction temperature T

150 °C

Storage temperature range T

stg

-65 to +150 °C

Operating temperature range T

-55 to +150 °C

Summary of content (4 pages)

PAGE 1
GSD2004S www.vishay.com Vishay Semiconductors Dual In-Series Small Signal High Voltage Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified available 1 • Base P/N-E3 - RoHS-compliant, commercial grade 2 • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.
PAGE 2
GSD2004S www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse breakdown voltage Leakage current SYMBOL MIN. IR = 100 μA VBR 300 VR = 240 V IR VR = 240 V, Tj = 150 °C IR IF = 20 mA VF IF = 100 mA TYP. MAX. UNIT 100 nA 100 μA V 0.87 V VF 1.00 V VF = VR = 0, f = 1 MHz CD 5.0 pF IF = IR = 30 mA, iR = 3.0 mA, RL = 100  trr 50 ns Forward voltage Diode capacitance Reverse recovery time TEST CONDITION 0.
PAGE 3
GSD2004S www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.
PAGE 4
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