Datasheet

GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
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Vishay Semiconductors
Revision: 11-Dec-13
3
Document Number: 88617
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Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10
1
0.1
0.01
0.4 0.6 1.4 1.60.8 1.0 1.2
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.1
1
10
0.01
200 10040 60 80
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
1
100
10
30
1
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 100
10
100
0.1
0.1 1 10
1
Mounted on
0.2" x 0.27" (5.0 mm x 7.0 mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 (1.93)
MAX.
0.220 (5.58)
REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
Cathode Band
0.066 (1.68)
MIN.