Datasheet

GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M
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Vishay General Semiconductor
Revision: 27-Sep-13
3
Document Number: 88614
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Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
50 - 400 V
600 - 1000 V
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
10
100
1000
50 - 400 V
600 - 1000 V
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9)
R
.
0.080
(2.03)
0.060
(1.52)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65)
0.210
(5.33)
0.190
(4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)