Datasheet

GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110
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Vishay General Semiconductor
Revision: 08-Jul-13
3
Document Number: 88611
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Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0
20
40
60
80
0.01
0.1
1
10
100
100
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Style GBPC1
Polarity shown on side of case: Positive lead by beveled corner
0.750 (19.05)
MIN.
0.094 (2.4) x 45°
AC
AC
0.040 (1.02) TYP.
0.200 (5.08)
0.160 (4.06)
0.445 (11.30)
0.405 (10.29)
0.032 (0.81)
0.028 (0.71)
DIA.
0.128 (3.25)
0.048 (1.22)
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
0.630 (16.00)
0.590 (14.98)
Hole For #6 Screw
0.158 (4.01)
0.142 (3.61)
DIA.