Datasheet

GBL005, GBL01, GBL02, GBL04, GBL06, GBL08, GBL10
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Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 88609
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Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
10
100
1000
50 - 400 V
600 - 1000 V
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBL
0.125 (3.17) x 45°
Chamfer
0.825 (20.9)
0.815 (20.7)
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.098 (2.5)
0.075 (1.9)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
0.140 (3.56)
0.128 (3.25)
0.022 (0.56)
0.018 (0.46)
0.050 (1.27)
0.040 (1.02)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.080 (2.03)
0.060 (1.50)
Polarity shown on front side of case, positive lead beveled corner