Datasheet

FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
Document Number: 88600
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
50
100
150
0
2
4
6
8
10
Heatsink, Case Temperature, T
C
Free Air, Ambient Temperature, T
A
Resistive or Inductive Load
Average Forward Rectified Current (A)
Temperature (°C)
1
10
100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
0.2
0.6
1.0
1.4
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
50 - 200 V
300 - 400 V
500 - 600 V
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
2.0
0.4
0.8
1.2
1.6
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Junction Capacitance
0
20
40
60
80
100
0.01
0.1
1
10
100
50 - 200 V
500 - 600 V
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
0.1
1
10
100
10
100
1000
50 - 200 V
500 - 600 V
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p