Datasheet

FEP30xP-E3
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Vishay General Semiconductor
Revision: 20-Feb-15
3
Document Number: 88597
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
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0
50
100
150
0
6
12
24
30
36
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1.81.61.41.2
Pulse Width = 300 μs
1 % Duty Cycle
T
J
= 125 °C
T
J
= 25 °C
50 V to 200 V
300 V to 400 V
500 V to 600 V
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
50 V to 200 V
300 V to 600 V
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
50 V to 400 V
500 V to 600 V