Datasheet

FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Feb-15
2
Document Number: 88597
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Note
(1)
Thermal resistance from junction to case per diode mounted on heatsink
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum instantaneous
forward voltage per diode
15.0 A V
F
0.95 1.3 1.5 V
Maximum DC reverse current at
rated DC blocking voltage 
per diode
T
C
= 25 °C
I
R
10
μA
T
C
= 100 °C 500
Maximum reverse recovery time
per diode
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 50 ns
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
175 145 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Typical thermal resistance per diode R
JC
(1)
1.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD FEP30JP-E3/45 6.15 30 30/tube Tube