Datasheet

FEP16xT, FEPF16xT, FEPB16xT
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Vishay General Semiconductor
Revision: 20-Feb-15
3
Document Number: 88596
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
0
50
100
150
0
4
8
12
16
20
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
0.2
0.6
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
50 V to 200 V
300 V to 400 V
500 V to 600 V
0
20
40
60
80
100
0.1
0.01
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
50 V to 400 V
500 V to 600 V
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
50 V to 400 V
500 V to 600 V