Datasheet

FEP16xT, FEPF16xT, FEPB16xT
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Vishay General Semiconductor
Revision: 20-Feb-15
2
Document Number: 88596
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Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
Maximum instantaneous
forward voltage per diode
8.0 A V
F
(1)
0.95 1.30 1.50 V
Maximum DC reverse
current per diode at rated DC
blocking voltage
T
C
= 25 °C
I
R
10
μA
T
C
= 100 °C 500
Maximum reverse recovery
time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 50 ns
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
85 60 pF
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP FEPF FEPB UNIT
Typical thermal resistance from junction to case per diode R
JC
2.2 3.1 2.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB FEP16JT-E3/45 1.85 45 50/tube Tube
ITO-220AB FEPF16JT-E3/45 1.97 45 50/tube Tube
TO-263AB FEPB16JT-E3/45 1.35 45 50/tube Tube
TO-263AB FEPB16JT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB FEP16JTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB FEPF16JTHE3/45
(1)
1.97 45 50/tube Tube
TO-263AB FEPB16JTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB FEPB16JTHE3/81
(1)
1.35 81 800/reel Tape and reel