Datasheet

ES3F, ES3G
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Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88590
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Reverse Switching Characteristics
Fig. 6 - Typical Junction Capacitance
0
3.0
80 90 100 110 120 130 140 150
2.0
1.0
Resistive or Inductive Load
Lead Temperature (°C)
Average Forward Rectified Curr
ent (A)
0
25
50
75
100
125
150
1
100
10
8.3 ms Single Half Sine-Wave
at T
L
= 110 °C
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
020406080 100
10 000
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
25 50 75 100 125 150 175
80
40
120
160
200
0
t
rr
Q
rr
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
Junction Temperature (°C)
Recovered Stored Charge/
Reverse Recovery Time nC/ns
0.1 1 10 100
Reverse Voltage (V)
100
10
1
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p