Datasheet

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ES1PB, ES1PC, ES1PD

www.vishay.com

Vishay General Semiconductor

Revision: 19-Feb-15

Document Number: 88918

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Current Density Surface Mount Ultrafast Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Glass passivated pallet chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• Low thermal resistance

• Meets MSL level 1 per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in secondary rectification and freewheeling for

ultrafast switching speeds of AC/DC and DC/DC converters

for both consumer and automotive applications.

MECHANICAL DATA

Case: DO-220AA (SMP)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS-compliant, and

automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

F(AV)

1.0 A

RRM

100 V, 150 V, 200 V

15 ns

at I

0.92 V

max. 150 °C

Package DO-220AA (SMP)

Diode variations Single die

DO-220AA (SMP)

eSMP

Series

Available

MAXIMUM RATINGS (T

= 25 °C unless otherwise noted)

PARAMETER SYMBOL ES1PB ES1PC ES1PD UNIT

Device marking code EB EC ED

Maximum repetitive peak reverse voltage V

RRM

100 150 200 V

Maximum average forward rectified current (fig. 1) I

F(AV)

1.0 A

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

FSM

30 A

Operating junction and storage temperature range T

, T

STG

-55 to +150 °C

Summary of content (5 pages)

PAGE 1
ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.
PAGE 2
ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.6 A Maximum instantaneous forward voltage SYMBOL VF (1) TJ = 25 °C IF = 1 A TJ = 25 °C Maximum reverse current at rated VR Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A Typical reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Typical stored charge IF = 1.
PAGE 3
ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 0.4 TL Measured at the Cathode Band Terminal 0.2 0 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 80 90 100 110 120 130 140 10 150 20 30 40 60 50 70 80 90 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig.
PAGE 4
ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.
PAGE 5
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