Datasheet

DF15005S, DF1501S, DF1502S, DF1504S, DF1506S, DF1508S, DF1510S
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Vishay General Semiconductor
Revision: 19-Aug-13
3
Document Number: 88570
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Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0
20
40
60
80
100
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 50 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Mounting Pad La yout
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.404 (10.3)
0.013 (0.330)
0.003 (0.076)
0.047 (1.20)
0.040 (1.02)
0.205 (5.2)
0.195 (5.0)
0.335 (8.51)
0.320 (8.13)
0.130 (3.3)
0.120 (3.05)
45°
0.386 (9.80)
Case Style DFS
0.404 MAX.
(10.26 MAX.)
0.205 (5.2)
0.195 (5.0)
0.047 MIN.
(1.20 MIN.)
0.060 MIN.
(1.52 MIN.)