Datasheet

TSUS5200, TSUS5201, TSUS5202
www.vishay.com
Vishay Semiconductors
Rev. 2.3, 24-Aug-11
2
Document Number: 81055
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21313
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21314
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA, t
p
= 20 ms V
F
1.3 1.7 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
- 1.3 mV/K
Reverse current V
R
= 5 V I
R
100 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
30 pF
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
- 0.8 %/K
Angle of half intensity ϕ ± 15 deg
Peak wavelength I
F
= 100 mA λ
p
950 nm
Spectral bandwidth I
F
= 100 mA Δλ 50 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time
I
F
= 100 mA t
r
800 ns
I
F
= 1.5 A t
r
400 ns
Fall time
I
F
= 100 mA t
f
800 ns
I
F
= 1.5 A t
f
400 ns
Virtual source diameter d3.8mm