Datasheet

CNY64/ CNY65/ CNY66
Vishay Semiconductors
Rev. A4, 11–Jan–996 (10)
Typical Characteristics (T
amb
= 25 _ C, unless otherwise specified)
025 5075
0
40
80
120
200
100
P – Total Power Dissipation ( mW )
tot
T
amb
– Ambient Temperature ( °C )
160
Coupled Device
Phototransistor
IR-Diode
95 11003
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
T
amb
– Ambient Temperature ( °C )96 11911
CTR – Relative Current Transfer Ratio
rel
V
CE
=5V
I
F
=10mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
0 102030405060708090100
T
amb
– Ambient Temperature ( °C )96 12000
I – Collector Dark Current,
CEO
with open Base ( nA )
V
CE
=20V
I
F
=0
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.1 1 10
0.01
0.1
1
100
I – Collector Current ( mA )
C
I
F
– Forward Current ( mA )
100
95 11012
10
V
CE
=5V
Figure 10. Collector Current vs. Forward Current
0.1 1 10
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
100
95 11013
I – Collector Current ( mA )
C
5mA
2mA
1mA
I
F
=50mA
10mA
Figure 11. Collector Current vs. Collector Emitter Voltage