Datasheet

CNY64/ CNY65/ CNY66
Vishay Semiconductors
Rev. A4, 11–Jan–994 (10)
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current I
si
120 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation T
amb
≤ 25 ° C P
si
250 mW
Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage V
IOTM
8 kV
Safety temperature T
si
180 ° C
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage –
Routine test
100%, t
test
= 1 s V
pd
2.8 kV
Partial discharge test voltage – t
Tr
= 60 s, t
test
= 10 s, V
IOTM
8 kV
gg
Lot test (sample test)
Tr test
(see figure 2)
V
pd
2.2 kV
Insulation resistance V
IO
= 500 V R
IO
10
12
W
V
IO
= 500 V,
T
amb
= 100 ° C
R
IO
10
11
W
V
IO
= 500 V,
T
amb
= 180 ° C
(construction test only)
R
IO
10
9
W
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 150 175 200
T
amb
( °C )95 10922
P
si
(mW)
I
si
(mA)
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
t
Tr
= 60 s
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884