Datasheet

CNY64/ CNY65/ CNY66
Vishay Semiconductors
Rev. A4, 11–Jan–992 (10)
Order Instruction
Ordering Code CTR Ranking Remarks
CNY64/ CNY65/ CNY66 50 to 300%
CNY64A/ CNY65A 63 to 125%
CNY64B/ CNY65B 100 to 200%
Features
Approvals:
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D VDE 0884, Certificate number 76814
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
D Isolation test voltage
(partial discharge test voltage) V
pd
= 2.8 kV peak
D Rated insulation voltage (RMS includes DC)
V
IOWM
= 1000 V
RMS
(1450 V peak)
D Rated recurring peak voltage (repetitive)
V
IORM
= 1000 V
RMS
D Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 200
D Thickness through insulation > 3 mm
D Coupling Systems:
CNY64 Coupling System H,
CNY65 Coupling System J,
CNY66 Coupling System K,
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
R
5 V
Forward current I
F
75 mA
Forward surge current t
p
≤ 10 m s I
FSM
1.5 A
Power dissipation T
amb
≤ 25 ° C P
V
120 mW
Junction temperature T
j
100 ° C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
CEO
32 V
Emitter collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 25 ° C P
V
130 mW
Junction temperature T
j
100 ° C
Coupler
Parameter Test Conditions Symbol Value Unit
AC isolation test voltage (RMS) t = 1 min V
IO
8.2 kV
Total power dissipation T
amb
≤ 25 ° C P
tot
250 mW
Ambient temperature range T
amb
–55 to +85 ° C
Storage temperature range T
stg
–55 to +100 ° C
Soldering temperature 2 mm from case, t ≤ 10 s T
sd
260 ° C