Datasheet

ManualsBrandsVishay ManualsOpto- & Photo CouplersOptocoupler DIP-4 HV 32 V

CNY64/ CNY65/ CNY66

Vishay Semiconductors

Rev. A4, 11–Jan–99 1 (10)

Optocoupler with Phototransistor Output

Description

The CNY64/ CNY65/ CNY66 consist of a photo-

transistor optically coupled to a gallium arsenide

infrared-emitting diode in a 4-lead plastic package.

The single components are mounted in opposite one-

another, providing a distance between input and

output for highest safety requirements of > 3 mm.

Applications

Circuits for safe protective separation against

electrical shock according to safety class II

(reinforced isolation):

For appl. class I – IV at mains voltage ≤ 300 V

For appl. class I – IV at mains voltage ≤ 600 V

For appl. class I – III at mains voltage ≤ 1000 V

according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver,

computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according

to the following equipment standards:

VDE 0884

Optocoupler for electrical safety requirements

IEC 950/EN 60950

Office machines (applied for reinforced isolation

for mains voltage ≤ 400 V

RMS

)

VDE 0804

Telecommunication apparatus and data

processing

IEC 65

Safety for mains-operated electronic and related

household apparatus

VDE 0700/IEC 335

Household equipment

VDE 0160

Electronic equipment for electrical power

installation

VDE 0750/IEC 601

Medical equipment

14832

A (+)

C (–)

95 10850

Summary of content (11 pages)

PAGE 1
CNY64/ CNY65/ CNY66 Vishay Semiconductors Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and output for highest safety requirements of > 3 mm.
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CNY64/ CNY65/ CNY66 Vishay Semiconductors Order Instruction Ordering Code CNY64/ CNY65/ CNY66 CNY64A/ CNY65A CNY64B/ CNY65B CTR Ranking 50 to 300% 63 to 125% 100 to 200% Remarks Features D Rated insulation voltage (RMS includes DC) Approvals: D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 76814 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd =
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CNY64/ CNY65/ CNY66 Vishay Semiconductors Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. 200 Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz fc 110 kHz Ck 0.
PAGE 4
CNY64/ CNY65/ CNY66 Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.
PAGE 5
CNY64/ CNY65/ CNY66 Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure g 4)) Typ. 2.6 2.4 2.7 0.3 5.0 3.0 25.0 42.5 +5V Unit s s s s s s s s m m m m m m m m 96 11698 IC = 5 mA; Adjusted trough input amplitude W RG = 50 tp 0.
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CNY64/ CNY65/ CNY66 Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) P tot – Total Power Dissipation ( mW ) 200 1000 ICEO– Collector Dark Current, with open Base ( nA ) 160 120 Coupled Device 80 Phototransistor IR-Diode 40 VCE=20V IF=0 100 10 1 0 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) 95 11003 0 Figure 6. Total Power Dissipation vs.
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CNY64/ CNY65/ CNY66 VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Semiconductors t on / t off – Turn on / Turn off Time ( m s ) 1.0 0.9 0.8 0.7 CTR=50% 0.6 0.5 0.4 0.3 0.2 20% 0.1 10% 0 1 30 ton 20 Saturated Operation VS=5V RL=1k 10 100 W 0 5 20 Non Saturated Operation VS=5V RL=100 m VCE=5V 100 10 ton W 15 toff 10 5 0 1 0.1 95 11015 20 15 Figure 14. Turn on / off Time vs.
PAGE 8
CNY64/ CNY65/ CNY66 Vishay Semiconductors Dimensions of CNY64 in mm weight: creepage distance: air path: y y ca. 0.73 g 9.5 mm 9.5 mm after mounting on PC board 14765 Dimensions of CNY65 in mm weight: creepage distance: air path: y y ca. 1.40 g 14 mm 14 mm after mounting on PC board 14763 8 (10) Rev.
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CNY64/ CNY65/ CNY66 Vishay Semiconductors Dimensions of CNY66 in mm weight: creepage distance: air path: y y ca. 1.70 g 17 mm 17 mm after mounting on PC board 14764 Rev.
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CNY64/ CNY65/ CNY66 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
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